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[PATCHED] Full Bridge Igbt Gate Driver

Decades of application expertise and technology development at both Infineon and International Rectifier have produced a portfolio of gate driver ICs for use with silicon and wide-bandgap power devices, such as MOSFETs, discrete IGBTs, IGBT modules, SiC MOSFETs and GaN HEMTs. We offer excellent product families of galvanic isolated gate drivers, automotive qualifies gate drivers, 200 V, 500-700 V, 1200 V level shift gate drivers, and non-isolated low-side drivers. Our portfolio spans a variety of configurations, voltage classes, isolation levels, protection features, and package options. State-of-the-art discrete switch families require tuning of gate drive circuits to take full advantage of their capacity and capabilities. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module.

Full Bridge Igbt Gate Driver


With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

The combination of fast timing specifications, leadless packages and narrow pulse-width response of our drivers enable you to switch FETs fast. Added features like gate-voltage regulation, programmable dead time and low internal power consumption make sure that high-frequency switching yields the highest efficiency possible.

Boost the efficiency of your design with strong drive currents, high CMTI and short propagation delays of our SiC and IGBT gate drivers. Our SiC gate drivers help you achieve robust isolation in your system with fast integrated short-circuit protection and high surge immunity. Reduce your system size, weight and cost by switching SiC at higher PWM frequencies with our fast, robust and reliable drivers.

For moderate to high DC power delivery, a bridge topology is a better choice, specifically a full-bridge topology with MOSFETs. The MOSFETs used as switching elements provide low on-state resistance, low power dissipation, high breakdown voltage, and high saturation current compared to comparable IGBTs. Using MOSFETs in this topology requires a full-bridge MOSFET driver to switch the transistors with a PWM signal. These components can be highly integrated with small footprint for driving high current loads, giving designers a compact option for their products.

Just like any other converter topology, the output current can be sensed and fed back into the input, which can then be used to adjust the PWM signal to ensure stable regulation. Any control functions, including any enable functionality on the full-bridge MOSFET driver IC, is implemented in a MCU or specialty logic. A very similar topology can be used to provide stable power regulation in large DC motors.

Two common implementations of motor driving with stable, adjustable DC power are with full-bridge and half-bridge drivers. Two examples with half-bridge and full-bridge driving for a motor are shown in the diagrams below.

In contrast, the panel on the right shows the same implementation but with a full-bridge MOSFET driver. In this circuit, the output from the driver IC switches the MOSFETs in pairs using a single PWM signal from an MCU. This highly integrated option reduces required component count and can still be used with precise feedback for speed or power control.

A gate driver IC provides much the same function as a full-bridge driver: it switches a MOSFET between ON and OFF states. There are some differences in terms of how these components are implemented in a design. While a full-bridge driver is specifically designed for a fixed configuration with four MOSFETs, a gate driver can switch individual MOSFETs without requiring synchronization with any other gate driver. Note that you could create a full-bridge MOSFET driver circuit using four MOSFET gate drivers. Which you should choose depends on the supply voltage you need to switch the MOSFETs, and the level of integration needed in the component.

The L6203 full-bridge MOSFET gate driver from STMicroelectronics shows the kind of integration involved in these components and how they provide high power. This component is designed for driving small motors and includes an integrated H-bridge MOSFET arrangement with up to 48 V output voltage at moderately high current (5 A peak, 4 A RMS). The L6203 includes an internal voltage reference for precise regulation, thermal shutdown circuit, and enable pin from an external controller. A sense resistor can be connected to provide feedback for motor control. The input and enable pins can also be modulated to provide one-phase or two-phase chopping for an external motor.

A comparable component is the TLE7181EMXUMA1 from Infineon. From the block diagram below, we see that this component can be configured for dual half-bridge or full-bridge driving with 2 or 4 MOSFETs, respectively. These external MOSFETs are used for high current DC motor drives in 12 V power nets (up to 34 V supply voltage) at high current. To ensure reliability and prevent damage to downstream components, there is a comprehensive protection circuit that provides under/overvoltage, overcurrent, overtemperature, and short circuit protection. In addition, there is an integrated regulator for ensuring stable output.

These two components have varying levels of integration and on-chip features, but they are good examples of what you can expect from typical full-bridge MOSFET driver components. The L6203 integrates everything onto the die and provides a small-footprint solution, but the power output is limited by the on-die MOSFETs. Heat dissipation happens directly in the component, so cooling measures might be needed to prevent overheating.

In contrast, the TLE7181EMXUMA1 can be used with a range of powers, which will be limited by the pull from the motor, the external MOSFET current limits, and the power supply used with the external MOSFETs. Overall, the driver plus its external bridge circuit takes up more space, but you can get more power.

The graph in Figure 2 depicts the estimated power consumption vs. switching frequency for a three-phase bridge configuration employing three dual IGBTs, each with a gate charge of 1100ηC. The value at zero Hz is the power consumed by the GDB before switching IGBTs of any current rating. The power consumed increases with switching frequency and is proportional to the gate charge. To determine the power required for a specific application, look up the gate charge (usually given in ηC on the data sheets) of the selected IGBT and offset the power consumed by the GDB at zero Hz by the power consumed by switching IGBTs. Note:It is not recommended to run a standard three-phase bridge, with IGBTs having a gate charge of 1500ηC, beyond 20KHz. Excessive heating of gate drive transistors may occur, resulting in potential damage to the board. Factory modifications are available to the standard board for operation up to 30KHz under the above stated conditions. Figure 8 depicts the maximum recommended frequency vs. gate charge.

It is important to consider the number of driver outputs for your chosen application. The operating voltage and output current parameters are also important factors to consider when choosing a gate driver. Gate driver ICs come in a standard semiconductor package, such as MSOP, PDIP, QFN and SOIC. Gate drivers may also come as a complete module.

Piezoelectricity is the electricity that comes from pressure and latent heat. Piezoelectric drivers (or Piezo drivers) are gate drivers designed to support piezo components. This includes optical fibre, inkjet printers, microphones, speakers and XY stages for micro scanning used in infrared cameras.

I'm working on a high current circuit which uses two drivers(UCC27712) to control a full-bridge IGBT module(MIEB101H1200EH). The drivers are powered by a 12V source and the full-bridge is powered by a 48V 62 amp source with a resistance load of 1 ohm . At a PWM frequency of 490 Hz the circuit works but there is a transient component in the transition between pulses that concerns me. Below I included a picture of the schematic and pictures of the signal(high-side of load referenced to ground) as I stepped the duty cycle through 20%, 40%, 60%, and 80%. If you have any insight into causes of this issue I would appreciate your input.

Since you are operating a full bridge, can you confirm the signal you are showing on the scope? I assume it is the switch node of one of the half bridge stages. I also would assume you are driving the high side of one half bridge leg at the same time as the low side of the other half bridge. Please confirm.

Can you show the two different half bridge switch nodes, HS10 and HS20 ? Also is the 1 Ohm load resistance from HS10 to HS20? I would confirm that the gate driver outputs are as you expect based on the driver inputs, and that the timing (including dead time) is as you expect.

The bridge driver products handle voltages up to 100V, with industry-leading gate rise and fall times and exceptional input-to-output propagation delay performance. Select parts are available in 4mm x 4mm and 3mm x 3mm DFN packages which meet IPC-2221 creepage and clearance specifications for high-voltage systems.

PEH4010 power modules can be used either as full-bridge or half-bridge cells for Modular Multilevel Converter prototypes. Indeed, they can be easily inter-connected to form cascaded multilevel converters.

A gate driver is a power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip or as a discrete module. In essence, a gate driver consists of a level shifter in combination with an amplifier. A gate driver IC serves as the interface between control signals (digital or analog controllers) and power switches (IGBTs, MOSFETs, SiC MOSFETs, and GaN HEMTs). An integrated gate-driver solution reduces design complexity, development time, bill of materials (BOM), and board space while improving reliability over discretely-implemented gate-drive solutions.[1] 350c69d7ab

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